![]() ![]() 18-micron drawn gate length N-well process, integrated with high voltage and NonVolatile-Memory modules, the, High-reliability NVM using SONOS technology - Isolation well for all 1.8V, 3.3V and 40V MOS devices - Integrated Based upon the industrial standard single poly with up to six metal layers 0. Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB's 0.18 micron Modular Mixed Signal HV CMOS Technology. XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and widthĪbstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model 18-micron drawn gate length N-well process, integrated with high voltage and NonVolatile-Memory modules, the Inputs and, 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB's 0.18 micron Modular Mixed Signal HV CMOS Technology. The TTL and CMOS level detection circuits use low noise power rails. XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell libraryĪbstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width 18-micron drawn gate length N-well process, integrated with high voltage and, process - High-reliability NVM using SONOS technology - Isolation well for all 1.8V, 5V and 18V MOS, 23 1.8V / 5.0V low power CMOS module single poly, four metals 1.8V and 5.0V LP NMOS/PMOS, PNP Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power, CMOS Power Management Technology. Or175 30X30) 0.18 um CMOS parameters CAPACITOR Titanium 30X30 0.6 um cmos process 0.18 um CMOS technologyĪbstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: Values Units Min gate length (N&P) 0.8 µm Gate oxide 150 or175 Å Inter-poly dielectric (oxide equiv.) 525 Å Active ( width /space) 0.8/1.6 µm Poly 1 ( width /space) 0.8/1.0 µm (Cap Bottom Plate) Poly 2 ( width /space) 0.8/1.0 µm ( CMOS Gate and Cap Top Plate) Contact ( width /space) 0.8/0.8 µm, Metal 2 ( width /space) 1.4/1.0 µm Metal 3 ( width /space) 1.4/1.2 µm Process Technology, Wafer Foundry Services 0.8µm CMOS Process Standard Features Standard Layout Rules and 0.18-um CMOS technology length and width Datasheets Context Search Catalog DatasheetĪbstract: CAPACITOR Titanium 30X30 0.6 um cmos process 0.18 um CMOS technology ![]()
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